@Article{MedeirosPSFSSMM:2012:SiThFi,
author = "Medeiros, Henrique Souza and Pessoa, Rodrigo Savio and Sag{\'a}s,
J. C. and Fraga, Mariana A and Santos, L{\'u}cia Vieira and Silva
Sobrinho, Argemiro S da and Massi, Marcos and Maciel, Homero S.",
affiliation = "{Instituto Tecnol{\'o}gico de Aeron{\'a}utica (ITA)} and
{Instituto Tecnol{\'o}gico de Aeron{\'a}utica (ITA)} and
{Instituto Tecnol{\'o}gico de Aeron{\'a}utica (ITA)} and
{Instituto Tecnol{\'o}gico de Aeron{\'a}utica (ITA)} and
{Instituto Nacional de Pesquisas Espaciais (INPE)} and {Instituto
Tecnol{\'o}gico de Aeron{\'a}utica (ITA)} and {Instituto
Tecnol{\'o}gico de Aeron{\'a}utica (ITA)} and {Instituto
Tecnol{\'o}gico de Aeron{\'a}utica (ITA)}",
title = "SixCy Thin Films Deposited at Low Temperature by Dual DC Magnetron
Sputtering:Effect of Power Supplied to Si and C Cathode Targets on
Film Physicochemical Properties",
journal = "Materials Science Forum. Silicon Carbide and Releted Material Book
Series",
year = "2012",
volume = "717 - 720",
number = "PTS 1 AND 2",
pages = "197--201",
note = "14th International Conference on Silicon Carbide and Related
Materials (ICSCRM 2011) Location: Cleveland, OH Date: SEP 11-16,
2011",
keywords = "Chemistry Analysis, DC Dual Magnetron Sputtering,
FilmStoichiometry, Low Temperature Deposition, Silicon Carbide
Thin Films.",
abstract = "A DC dual magnetron sputtering system with graphite (C) and
silicon (Si) targets was used to grow stoichiometric and
non-stoichiometric silicon carbide (SixCy) thin films at low
temperature. Two independently DC power sources were used to
enable the total discharge power be shared, under certain
proportions, between the Si and C magnetron cathodes. The
motivation was to control the sputtering rate of each target so as
to vary the stoichiometric ratio x/y of the deposited films. The
species content, thickness and chemical bonds of as-deposited
SixCy films were studied by Rutherford backscattering spectroscopy
(RBS), profilometry analysis and Fourier transform infrared
absorption (FTIR), respectively. Overall, the present work reveals
a new reliable plasma sputtering technique for low temperature
growth of amorphous SixCy thin films with the capability of tuning
the degree of formation of a-SiC, a-Si and a-C bonds in the film
bulk.",
doi = "10.4028/www.scientific.net/MSF.717-720.197",
url = "http://dx.doi.org/10.4028/www.scientific.net/MSF.717-720.197",
label = "lattes: 4359261479122193 6 MedeirosPPFSSSMM:2012:SiThFi",
language = "en",
targetfile = "medeiros_sixcy.pdf",
urlaccessdate = "01 maio 2024"
}